These particles are incorporated in the SiC material and act as nucleation
sites, which dramatically alter the microstructure of the material and
produce an equiaxial stress-free grain structure. The CVC™ process is a
mandrel deposition process where material grows on a graphite mandrel that
can be shaped to a desired near net configuration.
Trex CVC SiC™ is manufactured with a modified Chemical Vapor Deposition
(CVD) process in which high purity SiC particles are added to the reactant
chemical vapor stream, as shown below.
Welcome to TREX ADVANCED MATERIALS.
Manufacturer of chemical vapor composite
silicon carbide (CVC SiC™)
The CVC SiC™ process is readily
scalable to large dimensions, with parts as thick as 8cm and as large as
1.5m in diameter. CVC SiC™ thus overcomes many of the limitations of other
SiC material formation processes.
Trex CVC SiC™ is a fully dense ultra-high purity (<5 ppm impurities) material with a unique stress-free grain structure. Because of the grain structure the material is ideally suited for:
- Optics. Figure of lambda/20 P-V and surface roughness of 4 angstroms rms are routinely achieved. Lambda/40 P-V and 1 angstrom rms have been achieved.
- High Temperature Application. Unlike other silicon carbides, Trex CVC SiC™ will perform in extreme environments exceeding 3500°F because of its unique grain structure.
- High value added corrosion and/or biological environments where purity is paramount.
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